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npn silicon bipolar common emitter transistor technical data features ? operates over a wide range of voltages and frequencies ? +25.0 dbm p 1db and 60% collector efficiency @ 900 mhz, 4.8 volts, typ. ? 15 db g 1db @ 900 mhz, 4.8 volts, typ. ? -35 dbc imd 3 @ p out of +14 dbm per tone, 900 mhz, 3 volts, typ. ? +21.5 dbm p 1db and 50% collector efficiency @ 1900 mhz, 3 volts, typ. applications ? driver amplifier for gsm and amps/etacs/nmt cellular phones ? 900 and 1800 mhz ism ? special mobile radio, catv ? 1900 mhz us pcs AT-38043 description agilents AT-38043 is a low cost, npn silicon bipolar junction transistor housed in a miniature sc-70 surface mount plastic package. this device can be used as a pre-driver, driver, or output device in many applications for cellular and other wireless communications markets. at 4.8 volts, the AT-38043 features +25 dbm output power, while provid- ing 15 db of gain and 60% collec- tor efficiency. superior efficiency and gain make the AT-38043 an excellent choice for battery powered systems. the AT-38043 is fabricated with agilents 10 ghz f t self-aligned- transistor (sat) process. the die are nitride passivated for surface protection. excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self-alignment techniques, and gold metalization in the fabrication of these devices. surface mount package sot-343 (sc-70) outline 4t pin configuration 4 emitter collector 3 emitter 1 base 2
2 AT-38043 absolute maximum ratings absolute symbol parameter units maximum [1] v ebo emitter-base voltage v 1.4 v cbo collector-base voltage v 16.0 v ceo collector-emitter voltage v 9.5 i c collector current ma 160 p t power dissipation [2] mw 500 t j junction temperature c 150 t stg storage temperature c -65 to 150 thermal resistance [3] : q jc = 130 c/w notes: 1. permanent damage may occur if any of these limits are exceeded. 2. derate at 7.7 mw/ c for t c > 85 c. t c is defined to be the temperature of the collector pin 4, where the lead contacts the circuit board. 3. using the liquid crystal technique, v ce = 4.8 v, i c = 50 ma, t j = 150 c, 1C2 m m hot-spot resolution . electrical specifications, t c = 25 c freq. = 900 mhz, v ce = 4.8 v, i cq = 15 ma, cw operation, test circuit a, unless otherwise specified symbol parameters and test conditions units min. typ. max. p 1db output power @ 1 db gain compression [1] dbm +23.5 +25.0 g 1db 1 db compression gain [1] db 13.5 15.0 h c collector efficiency @ 1 db gain compression [1] %4560 mismatch tolerance, no damage [1] p out = +25 dbm 7:1 any phase, 2 sec duration imd 3 3rd order intermodulation distortion, f1 = 899 mhz dbc C35 2-tone test, p out each tone = +14 dbm [1] f2 = 901 mhz v ce = 3.0 v bv ebo emitter-base breakdown voltage i e = 0.2 ma, open collector v 1.4 bv cbo collector-base breakdown voltage i c = 1.0 ma, open emitter v 16.0 bv ceo collector-emitter breakdown voltage i c = 3.0 ma, open base v 9.5 h fe forward current transfer ratio v ce = 3 v, i c = 160 ma 50 150 330 i ceo collector leakage current v ceo = 5 v m a15 note: 1. with external matching on input and output, tested in a 50 ohm environment. refer to test circuit a.
3 AT-38043 typical performance, t c = 25 c 4 8 12 20 16 0 20 40 80 60 450 800 900 1800 1900 1000 2000 output power (dbm), gain (db) collector efficiency (%) 5 9 17 13 25 21 0 20 60 40 100 80 450 800 900 1800 1900 1000 2000 output power (dbm), gain (db) collector efficiency (%) frequency (mhz) figure 1. output power, gain, and collector efficiency vs. frequency at v ce = 1.2 v, i cq = 15 ma. frequency (mhz) 5 10 20 15 30 25 0 20 60 40 100 80 450 800 900 1800 1900 1000 2000 output power (dbm), gain (db) collector efficiency (%) frequency (mhz) figure 2. output power, gain, and collector efficiency vs. frequency at v ce = 3.0 v, i cq = 15 ma. figure 3. output power, gain, and collector efficiency vs. frequency at v ce = 4.8 v, i cq = 15 ma. figure 5. imd 3 , imd 5 vs. output power (per tone) at v ce = 3.0 v and i cq = 15 ma, frequency = 900 mhz. figure 6. imd 3 , imd 5 vs. output power (per tone) at v ce = 3.0 v and i cq = 15 ma, frequency = 1900 mhz. figure 4. imd 3 , imd 5 vs. output power (per tone) at v ce = 3.0 v and i cq = 15 ma, frequency = 450 mhz. p 1db h c g 1db imd 5 p 1db h c g 1db p 1db h c g 1db -60 -50 -40 0 -10 -30 -20 8 9 10 11 12 14 15 16 13 17 imd (dbc) output power/tone (dbm) g source = 0.855 170 g load = 0.576 149 imd 3 imd 5 -60 -50 -40 0 -10 -30 -20 2 4 6 8 10 14 16 18 12 20 imd (dbc) output power/tone (dbm) g source = 0.865 -164 g load = 0.500 153 imd 3 imd 5 -60 -50 -40 0 -10 -30 -20 135 79 1315 19 17 11 21 imd (dbc) output power/tone (dbm) g source = 0.854 -142 g load = 0.650 173 imd 3
4 frequency = 900 mhz duty cycle parameters 12.5% 33% 50% 100% = cw p 1db 22.8 22.7 22.6 22.5 g 1db 13.7 13.6 13.5 13.4 h c 57.6 58.0 57.3 56.1 p 3db 23.5 23.5 23.5 23.6 g 3db 11.7 11.6 11.5 11.4 h c 64.5 65.7 66.0 66.0 AT-38043 typical performance under pulsed operation, t c = 25 c v ce = 3.0 v, i cq = 15 ma, pulse width = 577 m s, unless otherwise specified frequency = 1900 mhz duty cycle parameters 12.5% 33% 50% 100% = cw p 1db 21.7 21.6 21.6 21.6 g 1db 7.4 7.4 7.3 7.3 h c 51.7 52.0 52.2 50.4 p 3db 24.1 23.9 23.8 23.8 g 3db 5.4 5.5 5.3 5.3 h c 64.6 64.3 64.5 63.1
5 AT-38043 typical large signal impedances freq. bias g source g load ( mhz ) v ce (v) i cq (ma) mag. ang. mag. ang. 450 1.2 15.0 0.873 169.4 0.602 163.5 450 3.0 15.0 0.855 170.3 0.576 148.7 450 4.8 15.0 0.873 176.3 0.593 133.2 800 1.2 15.0 0.886 -166.6 0.607 173.4 800 3.0 15.0 0.896 -170.9 0.505 151.1 800 4.8 15.0 0.899 -167.8 0.530 131.0 900 1.2 15.0 0.861 -160.1 0.576 175.4 900 3.0 15.0 0.865 -164.1 0.500 153.3 900 3.6 15.0 0.897 -165.9 0.528 147.6 900 4.8 15.0 0.877 -165.7 0.479 137.9 900 6.0 15.0 0.872 -166.4 0.494 128.2 1000 1.2 15.0 0.867 -162.9 0.656 171.0 1000 3.0 15.0 0.877 -163.7 0.590 150.5 1000 4.8 15.0 0.881 -162.7 0.575 139.8 1800 1.2 15.0 0.830 -138.2 0.598 -176.1 1800 3.0 15.0 0.863 -145.3 0.633 175.8 1800 4.8 15.0 0.870 -146.2 0.603 164.3 1900 1.2 15.0 0.839 -138.4 0.642 -178.5 1900 3.0 15.0 0.854 -142.0 0.650 172.6 1900 3.6 15.0 0.895 -149.4 0.666 171.1 1900 4.8 15.0 0.842 -138.2 0.610 166.4 1900 6.0 15.0 0.907 -149.3 0.636 156.4 2000 1.2 15.0 0.855 -143.5 0.705 177.5 2000 3.0 15.0 0.866 -140.1 0.673 173.0 2000 4.8 15.0 0.864 -140.0 0.682 163.0
6 figure 7. collector-base capacitance vs. collector-base voltage (dc test). 1.8 2.2 2.0 2.4 3.2 3.0 2.6 2.8 012 34 67 9 8 510 ccb (pf) vcb (v) packaged model c cpad cpad die area = 0.67 cpad = 0.36 pf e1 b e2 cpad label bf ikf ise ne vaf nf tf xtf vtf itf ptf xtb br ikr isc nc var value 280 299.9 9.9e-11 2.399 33.16 0.9935 1.6e-11 0.006656 0.02785 0.001 23 0 54.61 81 8.7e-13 1.587 1.511 label nr tr eg is xti cjc vjc mjc xcjc fc cje vje mje rb re rc value 0.9886 1e-9 1.11 3.598e-15 3 1.02 pf 0.4276 0.2508 0.001 0.999 0.98 pf 0.811 0.596 5.435 1.30 0.01 AT-38043 spice model parameters die model b l = la l = lb r = rb r = ra c = ca c = cb b e1 e2 c e label ra rb la lb ca cb value 0.1 0.2 0.85 nh 0.25 nh 0.01 pf 0.01 pf c l = la l = lb r = rb r = ra c = ca c = cb l = la r = ra l = lb r = rb c = cb c = ca l = la r = ra c = cb c = ca
7 AT-38043 typical scattering parameters, common emitter, z o = 50 w , v ce = 1.2 v, i c = 50 ma, t c = +25 c freq. s 11 s 21 s 12 s 22 ghz mag ang db mag ang db mag ang mag ang 0.05 0.74 -84 29.4 29.45 147 -28.9 0.036 58 0.79 -48 0.10 0.79 -122 26.2 20.32 132 -26.2 0.049 47 0.64 -73 0.25 0.83 -157 19.5 9.41 129 -24.9 0.057 50 0.52 -80 0.50 0.84 -174 13.7 4.82 146 -24.5 0.060 78 0.51 -42 0.75 0.84 178 10.1 3.21 168 -24.2 0.061 110 0.52 12 0.90 0.84 175 8.6 2.70 -178 -23.9 0.064 130 0.50 45 1.00 0.83 173 7.7 2.43 -169 -23.8 0.065 144 0.51 70 1.25 0.84 169 5.9 1.97 -145 -23.2 0.069 176 0.49 125 1.50 0.84 165 4.2 1.63 -122 -22.8 0.072 -152 0.51 -180 1.75 0.84 161 2.9 1.40 -97 -22.4 0.076 -120 0.52 -120 2.00 0.84 157 1.9 1.24 -73 -21.8 0.081 -89 0.51 -63 2.25 0.85 152 0.7 1.09 -49 -21.5 0.084 -58 0.54 -7 2.50 0.85 148 -0.3 0.97 -24 -21.1 0.088 -27 0.56 55 2.75 0.85 144 -1.1 0.88 1 -20.6 0.093 4 0.55 113 3.00 0.86 141 -2.0 0.80 26 -20.3 0.097 34 0.55 168 3.25 0.86 138 -2.9 0.72 52 -20.0 0.100 64 0.57 -135 3.50 0.87 136 -3.6 0.66 78 -19.6 0.105 94 0.57 -76 3.75 0.87 134 -4.3 0.61 105 -19.2 0.109 124 0.57 -19 4.00 0.88 133 -5.0 0.56 131 -19.0 0.112 153 0.59 37 4.25 0.89 131 -5.8 0.51 158 -18.9 0.114 -178 0.62 95 4.50 0.89 129 -6.5 0.48 -175 -18.7 0.116 -147 0.64 155 4.75 0.90 128 -7.0 0.45 -147 -18.4 0.121 -118 0.65 -147 5.00 0.90 127 -7.6 0.42 -121 -18.2 0.124 -89 0.67 -92 AT-38043 typical scattering parameters, common emitter, z o = 50 w , v ce = 3.0 v, i c = 50 ma, t c = +25 c freq. s 11 s 21 s 12 s 22 ghz mag ang db mag ang db mag ang mag ang 0.05 0.75 -66 30.5 33.53 154 -31.2 0.028 65 0.84 -33 0.10 0.78 -106 28.0 25.02 140 -27.7 0.041 53 0.67 -52 0.25 0.81 -149 21.8 12.34 133 -25.8 0.051 54 0.47 -62 0.50 0.82 -169 16.1 6.40 148 -25.3 0.054 80 0.42 -29 0.75 0.82 -179 12.6 4.27 170 -25.0 0.056 112 0.42 22 0.90 0.82 178 11.1 3.59 -177 -24.8 0.058 132 0.41 55 1.00 0.82 176 10.2 3.22 -167 -24.6 0.059 145 0.41 80 1.25 0.82 171 8.3 2.61 -144 -24.1 0.062 178 0.40 135 1.50 0.83 167 6.7 2.16 -120 -23.7 0.065 -150 0.41 -171 1.75 0.83 163 5.3 1.85 -96 -23.2 0.069 -117 0.43 -111 2.00 0.83 159 4.2 1.63 -72 -22.6 0.074 -85 0.43 -53 2.25 0.84 154 3.1 1.43 -48 -22.2 0.077 -55 0.46 2 2.50 0.84 150 2.1 1.27 -23 -21.8 0.081 -23 0.48 64 2.75 0.84 146 1.2 1.15 2 -21.3 0.086 8 0.47 123 3.00 0.85 142 0.3 1.03 27 -20.9 0.090 38 0.48 177 3.25 0.85 139 -0.6 0.93 52 -20.6 0.094 69 0.50 -126 3.50 0.86 137 -1.4 0.85 78 -20.2 0.098 99 0.51 -67 3.75 0.86 135 -2.2 0.78 105 -19.7 0.103 129 0.51 -9 4.00 0.87 134 -2.9 0.71 131 -19.4 0.107 158 0.53 46 4.25 0.88 132 -3.7 0.65 157 -19.2 0.109 -173 0.57 103 4.50 0.89 130 -4.5 0.60 -176 -19.0 0.112 -143 0.60 163 4.75 0.90 129 -5.0 0.56 -149 -18.7 0.117 -113 0.61 -140 5.00 0.90 128 -5.7 0.52 -122 -18.4 0.120 -84 0.62 -85
8 AT-38043 typical scattering parameters, common emitter, z o = 50 w , v ce = 3.6 v, i c = 50 ma, t c = +25 c freq. s 11 s 21 s 12 s 22 ghz mag ang db mag ang db mag ang mag ang 0.05 0.75 -65 30.6 33.94 154 -31.3 0.027 65 0.84 -32 0.10 0.78 -104 28.1 25.49 140 -27.8 0.041 54 0.67 -50 0.25 0.81 -148 22.0 12.64 133 -25.9 0.050 54 0.46 -60 0.50 0.82 -169 16.4 6.57 148 -25.4 0.054 80 0.41 -28 0.75 0.82 -178 12.8 4.38 170 -25.1 0.055 112 0.41 23 0.90 0.82 178 11.3 3.68 -177 -24.8 0.057 132 0.40 56 1.00 0.82 176 10.4 3.30 -167 -24.7 0.058 145 0.41 81 1.25 0.82 171 8.5 2.67 -144 -24.2 0.062 178 0.39 136 1.50 0.83 167 6.9 2.21 -120 -23.8 0.065 -150 0.40 -170 1.75 0.83 163 5.5 1.89 -95 -23.3 0.068 -117 0.42 -110 2.00 0.83 159 4.4 1.67 -71 -22.7 0.073 -85 0.42 -52 2.25 0.83 154 3.3 1.46 -48 -22.3 0.077 -54 0.45 2 2.50 0.84 150 2.3 1.30 -23 -21.9 0.081 -23 0.47 65 2.75 0.84 146 1.4 1.18 2 -21.4 0.085 8 0.47 124 3.00 0.84 142 0.5 1.06 27 -21.0 0.090 39 0.47 178 3.25 0.85 140 -0.4 0.95 52 -20.6 0.093 69 0.49 -125 3.50 0.85 137 -1.2 0.87 78 -20.2 0.098 99 0.50 -66 3.75 0.86 135 -2.0 0.80 105 -19.8 0.102 129 0.50 -8 4.00 0.87 134 -2.7 0.73 131 -19.5 0.106 158 0.53 47 4.25 0.88 132 -3.5 0.67 157 -19.3 0.109 -172 0.57 104 4.50 0.89 130 -4.3 0.61 -176 -19.0 0.112 -142 0.59 164 4.75 0.90 129 -4.8 0.57 -149 -18.7 0.116 -113 0.60 -139 5.00 0.90 128 -5.5 0.53 -122 -18.4 0.120 -84 0.62 -84 AT-38043 typical scattering parameters, common emitter, z o = 50 w , v ce = 4.8 v, i c = 50 ma, t c = +25 c freq. s 11 s 21 s 12 s 22 ghz mag ang db mag ang db mag ang mag ang 0.05 0.77 -63 30.8 34.50 155 -31.6 0.026 66 0.84 -31 0.10 0.79 -102 28.3 26.10 141 -28.0 0.040 55 0.68 -49 0.25 0.81 -147 22.3 13.02 133 -26.0 0.050 54 0.46 -58 0.50 0.81 -168 16.6 6.78 148 -25.5 0.053 80 0.40 -27 0.75 0.81 -178 13.1 4.52 170 -25.2 0.055 112 0.40 24 0.90 0.81 179 11.6 3.79 -176 -24.9 0.057 132 0.39 57 1.00 0.81 176 10.6 3.41 -167 -24.8 0.058 146 0.40 82 1.25 0.82 172 8.8 2.75 -143 -24.3 0.061 178 0.38 137 1.50 0.82 167 7.2 2.28 -120 -23.8 0.064 -149 0.39 -169 1.75 0.82 163 5.8 1.95 -95 -23.4 0.068 -117 0.41 -109 2.00 0.83 159 4.7 1.72 -71 -22.8 0.073 -85 0.41 -51 2.25 0.83 155 3.6 1.51 -47 -22.4 0.076 -54 0.44 3 2.50 0.83 150 2.5 1.34 -22 -21.9 0.080 -22 0.47 66 2.75 0.84 146 1.7 1.21 3 -21.4 0.085 9 0.46 125 3.00 0.84 143 0.7 1.09 27 -21.0 0.089 39 0.46 179 3.25 0.85 140 -0.2 0.98 53 -20.7 0.093 69 0.48 -124 3.50 0.85 138 -1.0 0.89 79 -20.3 0.097 100 0.49 -65 3.75 0.86 136 -1.7 0.82 105 -19.8 0.102 130 0.50 -7 4.00 0.87 134 -2.5 0.75 131 -19.5 0.106 159 0.52 48 4.25 0.88 132 -3.3 0.68 157 -19.3 0.108 -172 0.56 105 4.50 0.89 130 -4.0 0.63 -176 -19.1 0.111 -142 0.58 165 4.75 0.89 129 -4.6 0.59 -149 -18.7 0.116 -112 0.60 -138 5.00 0.90 128 -5.3 0.54 -122 -18.5 0.119 -83 0.61 -83
9 AT-38043 typical scattering parameters, common emitter, z o = 50 w , v ce = 6.0 v, i c = 50 ma, t c = +25 c freq. s 11 s 21 s 12 s 22 ghz mag ang db mag ang db mag ang mag ang 0.05 0.78 -62 30.8 34.85 155 -31.7 0.026 66 0.84 -30 0.10 0.80 -101 28.5 26.47 141 -28.1 0.039 55 0.68 -48 0.25 0.81 -146 22.4 13.26 134 -26.1 0.05 55 0.45 -57 0.50 0.81 -168 16.8 6.90 149 -25.6 0.053 81 0.39 -26 0.75 0.81 177 13.3 4.60 170 -25.3 0.055 112 0.40 25 0.90 0.81 179 11.7 3.86 -176 -25.0 0.056 132 0.38 57 1.00 0.81 177 10.8 3.47 -167 -24.8 0.057 146 0.39 83 1.25 0.82 172 8.9 2.80 -143 -24.3 0.061 178 0.37 138 1.50 0.82 167 7.3 2.32 -120 -23.9 0.064 -149 0.39 -168 1.75 0.82 163 6.0 1.99 -95 -23.4 0.067 -116 0.40 -108 2.00 0.83 159 4.8 1.75 -71 -22.8 0.072 -85 0.40 -50 2.25 0.83 155 3.7 1.53 -47 -22.4 0.076 -54 0.43 4 2.50 0.83 150 2.7 1.36 -22 -22.0 0.08 -22 0.46 66 2.75 0.84 146 1.8 1.23 3 -21.5 0.084 9 0.45 125 3.00 0.84 143 0.9 1.11 27 -21.1 0.088 39 0.45 180 3.25 0.85 140 0 1.00 53 -20.7 0.092 70 0.48 -123 3.50 0.85 138 -0.8 0.91 79 -20.3 0.097 100 0.49 -64 3.75 0.86 136 -1.6 0.83 105 -19.9 0.101 130 0.49 -6 4.00 0.87 134 -2.3 0.76 131 -19.6 0.105 159 0.52 48 4.25 0.88 132 -3.2 0.70 157 -19.4 0.108 -172 0.55 106 4.50 0.89 130 -3.9 0.64 -176 -19.1 0.111 -141 0.58 165 4.75 0.89 129 -4.5 0.60 -149 -18.8 0.115 -112 0.59 -137 5.00 0.90 128 -5.2 0.55 -123 -18.5 0.119 -83 0.61 -83
10 figure 8. insertion power gain, maximum available gain, and maximum stable gain vs. frequency v ce = 1.2 v, i c = 50 ma. -10 0 -5 5 30 25 20 10 15 0.05 0.25 0.75 1.00 2.00 3.00 4.00 5.00 gain (db) frequency (ghz) msg mag |s 21 | 2 figure 9. insertion power gain, maximum available gain, and maximum stable gain vs. frequency v ce = 3.0 v, i c = 50 ma. -10 0 -5 5 35 30 25 20 10 15 0.05 0.25 0.75 1.00 2.00 3.00 4.00 5.00 gain (db) frequency (ghz) msg mag |s 21 | 2 figure 10. insertion power gain, maximum available gain, and maximum stable gain vs. frequency v ce = 3.6 v, i c = 50 ma. -10 0 -5 5 35 30 25 20 10 15 0.05 0.25 0.75 1.00 2.00 3.00 4.00 5.00 gain (db) frequency (ghz) msg mag |s 21 | 2 figure 11. insertion power gain, maximum available gain, and maximum stable gain vs. frequency v ce = 4.8 v, i c = 50 ma. -10 0 -5 5 35 30 25 20 10 15 0.05 0.25 0.75 1.00 2.00 3.00 4.00 5.00 gain (db) frequency (ghz) msg mag |s 21 | 2 figure 12. insertion power gain, maximum available gain, and maximum stable gain vs. frequency v ce = 6.0 v, i c = 50 ma. -10 0 -5 5 35 30 25 20 10 15 0.05 0.25 0.75 1.00 2.00 3.00 4.00 5.00 gain (db) frequency (ghz) msg mag |s 21 | 2 AT-38043 typical performance, t c = 25 c
11 test circuit a: test circuit board layout @ 900 mhz test circuit a: test circuit schematic diagram @ 900 mhz v bb t1 r2 c3 r1 c5 c10 c9 v cc v cc c6 c7 c1 c2 c3 c4 c5 c6 c7 c8 c9 c10 r1 r2 t1 100.0 pf 100.0 pf 100.0 nf 10.0 pf 100.0 nf 1.5 f 10.0 f 100.0 pf 3.6 pf 100.0 pf 10.0 620.0 mbt 2222a 4/97 output input b?fg0142 rev a c4 c1 c2 c8 pa4 demo 76.2 (3.0) 38.1 (1.5) v bb cw test v ce = 4.8 v i cq = 15 ma freq. = 900 mhz test circuit: fr-4 microstrip, glass epoxy board dielectric constant = 4.5 thickness = 0.79 (.031) note: dimensions are shown in millimeters (inches). 620 v bb v cc 10 rf in 100 pf 100 nf 80 80 50 50 l /4 @ 900 mhz l /4 @ 900 mhz b ce dc transistor 100 pf 100 pf 10 pf = 5.89 (.232) 100 pf rf out 3.6 pf = 27.74 (1.092) 100 nf 1.5 f 10 f cw test v ce = 4.8 v i cq = 15 ma freq. = 900 mhz
12 test circuit b: test circuit board layout @ 1900 mhz test circuit b: test circuit schematic diagram @ 1900 mhz 620 v bb v cc 10 rf in 100 pf 100 nf 80 80 50 50 l /4 @ 1900 mhz l /4 @ 1900 mhz b ce dc transistor 100 pf 100 pf 3.6 pf = 0.020 (0.510) 100 pf rf out 1.8 pf = 0.299 (7.590) 100 nf 1.5 f 10 f cw test v ce = 3.0 v i cq = 15 ma freq. = 1900 mhz v bb t1 r2 c2 r1 c7 c10 c5 v cc v cc c8 c9 c1 c2 c3 c4 c5 c6 c7 c8 c9 c10 r1 r2 t1 100.0 pf 100.0 nf 100.0 pf 3.6 pf 1.8 pf 100 pf 100 nf 1.5 f 10 f 100.0 pf 10.0 620.0 mbt 2222a 4/97 output input b?fg0142 rev a c4 c1 c3 c6 pa4 demo 76.2 (3.0) 38.1 (1.5) v bb cw test v ce = 3.0 v i cq = 15 ma freq. = 1900 mhz test circuit: fr-4 microstrip, glass epoxy board dielectric constant = 4.5 thickness = 0.79 (.031) note: dimensions are shown in millimeters (inches).
13 package dimensions sot-343 (sc-70) plastic package part number ordering information part number devices per reel container AT-38043-tr1 3000 7" reel AT-38043-tr2 10,000 13" reel AT-38043-blk 100 tape e d a a1 b typ e e1 1.30 (0.051) bsc 1.15 (.045) bsc q h c typ l dimensions are in millimeters (inches) dimensions min. 0.80 (0.031) 0 (0) 0.25 (0.010) 0.10 (0.004) 1.90 (0.075) 2.00 (0.079) 0.55 (0.022) 0.450 typ (0.018) 1.15 (0.045) 0.10 (0.004) 0 max. 1.00 (0.039) 0.10 (0.004) 0.35 (0.014) 0.20 (0.008) 2.10 (0.083) 2.20 (0.087) 0.65 (0.025) 1.35 (0.053) 0.35 (0.014) 10 symbol a a1 b c d e e h e1 l q 1.15 (.045) ref 1.30 (.051) ref 1.30 (.051) 2.60 (.102) 0.55 (.021) typ 0.85 (.033)
14 device orientation tape dimensions for outline 4t user feed direction cover tape carrier tape reel end view 8 mm 4 mm top view 38 38 38 38 p p 0 p 2 f w d 1 d e a 0 8 max. t 1 (carrier tape thickness) 5 max. b 0 k 0 description symbol size (mm) size (inches) length width depth pitch bottom hole diameter a 0 b 0 k 0 p d 1 2.24 0.10 2.34 0.10 1.22 0.10 4.00 0.10 1.00 + 0.25 0.088 0.004 0.092 0.004 0.048 0.004 0.157 0.004 0.039 + 0.010 cavity diameter pitch position d p 0 e 1.55 0.05 4.00 0.10 1.75 0.10 0.061 0.002 0.157 0.004 0.069 0.004 perforation width thickness w t 1 8.00 0.30 0.255 0.013 0.315 0.012 0.010 0.0005 carrier tape cavity to perforation (width direction) cavity to perforation (length direction) f p 2 3.50 0.05 2.00 0.05 0.138 0.002 0.079 0.002 distance
www.semiconductor.agilent.com data subject to change. copyright ? 1999 agilent technologies 5966-1275e (11/99)

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